Seminar 1: RF material, manufacturing and circuit innovation

Date: Monday 25^th February 2013              Time: 10:30 to 12:30 (10:00 for networking)

Much of the recent focus on materials and manufacturing innovation has been on graphene but in practice RF designers now have access to a broad range of new materials and combinations of materials that potentially yield useful performance gain and design flexibility. Two contemporary examples are silicon on sapphire used in high throw switch paths and RF MEMS used in digital capacitor and resonator and reactive component technology.

This session examines practical implementation options and the related impact on mobile broadband user device performance.  

Confirmed agenda and speakers:

·         Introduction from chair, Roger Belcher, RTT

·         UltraCMOS® for high performance switch paths and tuneable components,Rodd Novak, Peregrine Semiconductor

·         RF MEMS for antenna impedance tuning and tuneable RF front-ends, Jeff Hilbert, Wispry

·         RF MEMS – MEMS based technology platform for high performance RF switching, Guillaume d’Eyssautier, DelfMEMS

·         MEMS resonators – a new approach to oscillator design, Matthew Crowley, Sand9

·         RF MEMS –third generation performance benchmarks, Larry Morrell, Cavendish Kinetics

·         Open forum Q&A panel session with all speakers and audience

Secure your place by registering in advance: http://ictktnmwc1.eventbrite.co.uk/

The seminar will take place in Hall 8.1 (Hall 8 level 1) room 8.3 and therefore to access area you must have valid pass to Mobile World Congress. A full conference pass is not required to attend this seminar.